v rrm = 150 v - 200 v i f(av) = 500 a features ? high surge capability heavy three tower package ? electrically isolated base plate ? not esd sensitive parameter symbol mbrta500150(r) unit repetitive peak reverse voltage v rrm 150 v rms reverse voltage v rms 106 v silicon power schottk y diode conditions mbrta500150 thru MBRTA500200r 200 141 MBRTA500200(r) ? isolation type package ? types from 150 v to 200 v v rrm maximum ratings, at t j = 25 c, unless otherwise specified ("r" devices have leads reversed) dc blocking voltage v dc 150 v operating temperature t j -55 to 150 c storage temperature t stg -55 to 150 c parameter symbol mbrta500150(r) unit average forward current (per pkg) i f(av) 500 a maximum instantaneous forward voltage (per leg) 0.88 4 10 50 thermal characteristics thermal resistance, junction - case (per leg) r jc 0.30 c/w t j = 100 c 10 -55 to 150 200 4 MBRTA500200(r) 0.30 t j = 150 c 0.92 50 electrical characteristics, at tj = 25 c, unless otherwise specified reverse current at rated dc blocking voltage (per leg) i r t j = 25 c i fm = 250 a, t j = 25 c conditions -55 to 150 v f ma v t c = 100 c 500 3500 a peak forward surge current (per leg) i fsm t p = 8.3 ms, half sine 3500 www.genesicsemi.com/s ilicon-products/schottky-rectifiers/ 1
mbrta500150 thru MBRTA500200r www.genesicsemi.com/s ilicon-products/schottky-rectifiers/ 2
package dimensions and terminal configuration product is marked with part number and terminal configuration. mbrta500150 thru MBRTA500200r www.genesicsemi.com/s ilicon-products/schottky-rectifiers/ 3
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